High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator

High-Speed Traveling-Wave Electroabsorption Modulators

Electroabsorption modulators (EAMs) based on the quantum confined Stark effect in multiple quantum wells (MQWs) have advantages for high-speed, low drive voltage, and high extinction ratio applications. In this paper, a traveling-wave electrode structure is proposed to achieve high bandwidths with long devices and lower drive voltages at 1.55μm wavelength. An InGaAsP/InGaAsP MQW traveling-wave ...

High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

In this paper, for the rst time, a high performance hybrid silicon evanescent traveling wave electroabsorption modulator based on asymmetric intra-step-barrier coupled double strained quantum wells active layer is introduced which has double steps at III/V mesa structure. Through this active layer, hybrid silicon evanescent traveling wave electroabsorption modulator will be advantages such as v...

Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals

High-Speed InP-Based Long-Wavelength VCSELs

The rapid growth of internet and cloud computing applications drives a huge demand for bandwidth capacity in communication networks, while power consumption, cost, and space density must scale down. This growth leads to an increase in the size of data centers (longer optical links), and of the fibers’ channel data rate, rooted in Moore’s Law. Until now, multi-mode fibers (MMF) have been largely...

High-Speed, Low-Driving-Voltage Dual-Drive InP-Based Mach-Zehnder Modulator

We present a dual traveling-wave electrode InP-based Mach-Zehnder (MZ) modulator with an n-i-n waveguide structure. An electrical input/output interface placed on one side of the chip helps us to drive the modulator in a push-pull configuration. This configuration provides the modulator with great advantages such as reduced driving voltage amplitude, chirp-free operation, and the ability to sup...